An X-ray study of over 200 single crystals of silicon carbide has established the superiority of transmission Laue photography for rapid polytype identification. The great majority of high-purity crystals grown at temperatures above 2400°C are made up of types 6H or 15Ii, with frequent syntactic intergrowth of the two. A large number of giant polytypes was encountered, and new modifications 72H, 130H, 408H, 213R, 240R, 242R, 288R, and 1080R were identified. Many of the Laue patterns were found to display anomalous diffuse reflections which are only partially related to the diffraction patterns of the polytypes, and whose nature has yet to be explained.

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