Abstract

The purpose of this paper is to determine the effect of NaF and firing temperature on the dielectric properties (dielectric constant and dielectric loss) of talc, which is used in the electrical and electronic industries as a circuit element. A detailed characterization of the samples was made by XRD, FTIR, SEM and TG-DTG methods. Dielectric measurements were performed in the frequency range from 1 MHz to 80 MHz at room temperature. The dielectric constant value increased with an increase in firing temperature due to the removal of polarizable compounds from the talc structure. The higher dielectric constant values were obtained by addition of NaF. The dielectric loss of NaF doped talc decreased with the increase of firing temperature and increased with the increase of the amount of NaF.

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